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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5271 DESCRIPTION With TO-220F package APPLICATIONS For resonant switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 300 Collector-base voltage Open emitter Collector-emitter voltage Open base 200 7 Emitter-base voltage Open collector Collector current 5 Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 10 2 30 150 -55~150 UNIT V V V A A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5271 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IC=2.5A;IB=0.5A IC=2.5A;IB=0.5A VCB=300V; IE=0 VEB=7V; IC=0 IC=2.5A ; VCE=2V IC=1mA ; VCE=2V IE=-0.5A ; VCE=12V VCB=10V;f=1MHz 10 15 10 MHz pF MIN 200 1.0 1.5 100 100 30 |I |I TYP. MAX UNIT V V V A A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Switching times ton tstg tf TOR NDU ICO E SEM ANG INCH Output capacitance 45 Turn-on time Storage time 0.3 IC=2.5A;IB1=0.5A;IB2=-1.0A RL=60| ;VCC=150V 1.0 Fall time 0.1 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5271 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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